The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
May. 18, 1999
Shigehiro Kuge, Hyogo, JP;
Kazutami Arimoto, Hyogo, JP;
Masaki Tsukude, Hyogo, JP;
Kazuyasu Fujishima, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
On transistors P , P , N and N constituting an NAND gate, a interconnection pattern W of metal having high melting point and aluminum interconnection patterns Al and Al are stacked. A local line LL for connecting transistors P , P , N and N to each other is formed by the interconnection pattern W of metal having high melting point, signal lines SL and SL′ for signal input/output between the NAND gate and the outside are formed by aluminum interconnection pattern Al , and power supply lines VL and VL′ for applying power supply potentials Vcc and Vss to the NAND gate are formed by the aluminum interconnection pattern Al . As compared with the prior art in which the local line LL is formed by the aluminum interconnection pattern Al , the degree of freedom in layout can be improved and the layout area can be reduced.