The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
May. 23, 2001
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor device having a metal interconnection structure, and a method of forming a corresponding semiconductor device having a metal interconnection. The semiconductor device includes an interlevel dielectric (ILD) film deposited over a semiconductor substrate. The semiconductor substrate includes gate electrodes thereon separated from each other by an equal distance, and includes junction areas located between the gate electrodes, and is subjected to polishing. A portion of the ILD film aligned with a gate electrode is etched to a depth to form a trench. An anti-short insulating layer is deposited on the ILD film and in the trench. The anti-short insulating layer and the ILD film are etched to form a via hole so as to expose a junction area. The trench and the via hole are filled with metal, thereby resulting in a completed metal interconnection.