The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Oct. 13, 1999
Brian R. Pelly, Palos Verdes Estates, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A combination of an IGBT and an antiparallel-connected freewheeling diode in which the IGBT die size is greater than about twice the diode die size. Preferably the diode die size is about 10%-25% of that of the IGBT. The respective die sizes of an IGBT and an antiparallel connected freewheeling diode may be adjusted by the steps of: determining respective initial die sizes for the IGBT and the diode; increasing the IGBT die size from the initial value; and reducing said diode die size from the initial value. The IGBT die size is increased sufficiently to reduce current density, conduction losses and switching losses in the IGBT. The diode die size is reduced sufficiently to reduce the reverse recovery charge of the diode so as to further reduce switching losses in the IGBT, to a minimum size which is sufficient to carry the antiparallel current without substantial overheating. The adjustment of the diode die size is advantageous either independently of, or in combination with, the adjustment of the IGBT die size. These adjustments are capable of reducing the switching energy of the IGBT and diode by about 30%-40% below that of a conventional IGBT-diode combination.