The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
May. 23, 2001
Robert O'Handley, Andover, MA (US);
Yi-Wun Li, Orinda, CA (US);
Spinix Corporation, Moraga, CA (US);
Abstract
Method and system for estimating a concentration of free electrons with a selected spin polarization in a semiconductor material. A static magnetic field and an electromagnetic field are impressed on the semiconductor, and free electrons are injected (through diffusion or tunneling) into the semiconductor material from a ferromagnetic material. Motion of the injected, spin-polarized electrons, within the semiconductor gives rise to a Hall voltage across the semiconductor. This voltage is measured at one or more spaced apart locations and analyzed to detect presence of, and estimate a concentration of, free electrons with a selected spin at at least one location within the semiconductor. Effects of an imposed stress, temperature, illumination or electromagnetic field on the semiconductor can be determined.