The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Mar. 27, 2001
Yasuhisa Kaneko, Kawasaki, JP;
Mitsuchika Saito, Kanagawa, JP;
Christopher Kocot, Palo Alto, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
The photoconductive switch comprises a first confinement layer, a second confinement layer, a photoconductive layer that includes a doped sub-layer and an undoped sub-layer, a first electrode and a second electrode. The first confinement layer is a layer of a first semiconductor material having a first band-gap energy and a first conductivity type. The second confinement layer is a layer of a second semiconductor material having a second band-gap energy. The photoconductive layer is a layer of a third semiconductor material having a third band-gap energy and a second conductivity type, opposite to the first conductivity type. The photoconductive layer is sandwiched between the first confinement layer and the second confinement layer, and the third band-gap energy is less than the first and second band-gap energies. In the photoconductive layer, the doped sub-layer is in contact with the first confinement layer, and the undoped sub-layer is adjacent the second confinement layer. The first electrode and the second electrode are separate from each other and are located on the surface of the first confinement layer remote from the photoconductive layer.