The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Jun. 06, 2000
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
Annealing technology is capable of heating a wafer on which a copper film is formed at a desired temperature within a short period of time. A light-shielding plate of SiC (silicon carbide) exhibiting a flat emissivity irrespective of the wavelengths and emitting light over a wide band of wavelengths is interposed between the wafer on which is formed a copper film having a high light reflection factor and lamps The lamps are turned on in this state so that the light-shielding plate is heated, first, and, then, the wafer is heated by light radiated from the light-shielding plate that is heated, thereby to anneal the copper film.