The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Dec. 14, 1999
Naoto Akiyama, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method for manufacturing a semiconductor device, a first insulation film is grown on a semiconductor substrate, a first interconnect is formed thereover, and a second insulation film is grown over the first insulation film, including the first interconnect. A first connecting via hole, disposed at an edge part of the first interconnect, and a second connecting via hole, disposed at the center part thereof, are then formed, a metal film being additionally grown on the second insulation film, after which chemical metal polishing is used to remove the metal film, over which is formed a second interconnect.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile