The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2002

Filed:

Jul. 27, 2000
Applicant:
Inventors:

Yoshi Ono, Camas, WA (US);

Yanjun Ma, Vancouver, WA (US);

Sheng Teng Hsu, Camas, WA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/126 ;
U.S. Cl.
CPC ...
H01L 2/126 ;
Abstract

A method of plasma doping substrates is provided. The substrate is covered with photoresist and placed within a plasma chamber. A doping gas is introduced into the chamber and ionized. A dilutant gas is also introduced to provide better control of the total amount of dosage associated with a given duration of exposure. The dilutant gas is preferably monatomic to reduce, or eliminate, affects associated with pressure variations within the chamber caused by dissociation of elements within the plasma chamber. The dilutant gas preferably contains lighter elements so as to reduce, or eliminate, damage to the photoresist caused by ion impacts. The dilutant gas is preferably neon or helium. The present method provides a means to better control the dosage and reduce photoresist damage and contamination.


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