The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Apr. 08, 1999
Emmerich Bertagnolli, München, DE;
Josef Willer, Riemerling, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a stacked capacitor in a semiconductor configuration, in which one electrode of the stacked capacitor is connected via a terminal region of a first conductivity type to a source or drain of a transistor. The semiconductor configuration having one electrode of a stacked capacitor produced by utilizing different etching rates of semiconductor layers of a second conductivity type which are doped to different extents. After the etching of the one electrode of the stacked capacitor, doping reversal of the semiconductor layers remaining after the etching operation to the first conductivity type is performed, with the result that the electrode has the same conductivity type as the terminal region and no pn junction occurs between the electrode and terminal region.