The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
May. 31, 2000
Sony Corporation, , JP;
Abstract
A semiconductor nonvolatile memory device using SA-STI cells improved in quality and suitable for increasing the degree of integration is provided with a semiconductor substrate having in its surface a channel formation region; an element isolation insulating film buried in a trench formed in the semiconductor substrate so as to divide the channel formation region into a plurality of regions; a gate insulating film formed on the channel formation region; a floating gate provided with a first floating gate formed at an upper layer of the gate insulating film and second floating gates formed at facing sides of the same; an inter-layer insulating film formed at an upper layer of the first floating gate and the second floating gates; a control gate formed at an upper layer of the inter-layer insulating film; and a source-drain region former connected to the channel formation region.