The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Jun. 02, 2000
Paul Stephen Andry, Mohegan Lake, NY (US);
Evan George Colgan, Chestnut Ridge, NY (US);
Hisanori Kinoshita, Kusatsu, JP;
Hiroaki Kitahara, Ohtsu, JP;
Frank R. Libsch, White Plains, NY (US);
Kai R. Schleupen, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for opening resist in raised areas of a semiconductor device. In one aspect, a conductive layer is formed over a channel insulator layer to form a raised portion including a height above a substantially planar surrounding area, the channel insulator layer being aligned to a gate electrode. A photoresist layer is formed over the raised portion and the surrounding area, and patterned by employing a gray scale light mask to reduce exposure light on the photoresist over the raised portion. Then, the photoresist is etched to thin it such that a gap is formed in the photoresist down to the conductive layer over the raised portion, but the photoresist remains everywhere else, and the conductive layer is etched in accordance with the photoresist to form source and drain electrodes which are self aligned to the channel insulator layer.