The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Jan. 05, 2000
Jean-Pierre Briand, Antony, FR;
Universite Pierre et Marie Curie, Paris, FR;
Abstract
The invention concerns a device and a method for ion beam etching for producing an etched surface ( ) on a semiconductor ( ) or insulant The device comprises a positive ion source ( ), means for guiding ( ) an ion beam ( ), a system for detecting the spatial and temporal interaction of the ions and the etched surface, means for interrupting ( ) the beam and means for displacing the etched surface relatively to the beam. A processing unit ( ) is connected to the displacing means, to the detecting means and to the beam interrupting means and controls, preferably iteratively, successive, operations detecting interaction of the ion beam and the etched surface, interrupting the beam, relative displacing of the etched surface with respect to the beam position and restoring the beam.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile