The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2002

Filed:

Jun. 26, 2000
Applicant:
Inventors:

Takayoshi Andou, Tokyo, JP;

Hitoshi Ninomiya, Tokyo, JP;

Kinya Ohtani, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/348 ;
U.S. Cl.
CPC ...
H01L 2/348 ;
Abstract

In a semiconductor device, an active region is formed on a semiconductor substrate. An electrode layer is directly formed on the active region and serves as a bonding pad. The electrode layer is mainly formed by an Al alloy layer containing Cu.


Find Patent Forward Citations

Loading…