The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Jul. 19, 2001
Applicant:
Inventors:
Takeshi Kishida, Hyogo, JP;
Shigenori Kido, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/840 ;
U.S. Cl.
CPC ...
H01L 2/840 ;
Abstract
A semiconductor device with a high reliability is provided. The semiconductor device includes a silicon substrate, titanium nitride films and an interlayer insulating film. A first opening is formed in the titanium nitride film. A second opening having a diameter different from that of the first opening is formed in the second titanium nitride film. A contact hole is formed in the interlayer insulating film. A titanium film, a titanium nitride film, a plug layer and an interconnect layer are formed so as to be electrically connected to the titanium nitride films through the first and second openings.