The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Sep. 29, 2000
Applicant:
Inventor:
Hsueh-Rong Chang, Thousand Oaks, CA (US);
Assignee:
Rockwell Technologies, LLC, Thousand Oaks, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 3/111 ;
U.S. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 3/111 ;
Abstract
An insulated-gate bipolar switch contains a number of trench-IGBT structures interdigitated with a number of floating mesas and trench gates to reduce inversion channel density. The IGBT mesa widths and the floating mesa widths are made different, which enables the switch to provide desired V , SCSOA and RBSOA values. The mesa widths and the number of floating mesas per unit cell are adjusted as needed to provide a switch having desired characteristics.