The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Nov. 13, 2000
Yasuhiro Ando, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In the guard ring section, four regions, p diffusion region, n diffusion region, n diffusion region, and p diffusion region, are formed to surround a hard macro and disposed in the order of this from the inside, and the inside two regions are disposed in an n well, and the outside two regions are disposed in a p well. A potential VSS is applied in the innermost p diffusion region and the outermost p diffusion region, and a potential VDD is applied in the two n diffusion regions disposed between these p diffusion regions. As a result, capacitors are formed between the n well and the p diffusion region formed in the n well, and between the p well and the n diffusion region formed in the p well, and therefore noise from outside is shielded, power source noise is absorbed, and malfunctions of the macro cell are prevented.