The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Jan. 02, 2001
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided are a semiconductor device that can obtain more output current without increasing the occupied area of a MOS transistor, and a method for manufacturing the same. MOS transistors (M M ) are electrically isolated by a trench isolation oxide film ( ). The MOS transistor (M ) has a groove portion (GP) in which the width of the top is 20 nm to 80 nm and the depth is 50 nm to 150 nm. The groove portion (GP) is disposed at the boundary part between a trench isolation insulating film ( ) and an active region (AR ) so as to surround the active region (AR ). A gate electrode ( A) is not only disposed above the active region (AR ) but also buried in the groove (GP) with a gate oxide film ( ) interposed therebetween. Similarly, in the MOS transistor (M ), a groove portion (GP) is disposed at the boundary part between the trench isolation insulating film ( ) and an active region (AR ) so as to surround the active region (AR ), and a gate electrode ( A) is also buried in the groove (GP) with the gate oxide film ( ) interposed therebetween.