The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Jan. 11, 2001
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There is provided a semiconductor light emitting device having improved adhesion of an electrode by reducing defects in a crystal surface. An n-type AlGaInP lower clad layer , an AlGaInP active layer , a p-type AlGaInP upper clad layer , a p-type AlGaInP intermediate layer whose lattice matching rate &Dgr;a/a with GaAs is −3.3%, a p-type AlGaInP current diffusion layer and a p-type electrode are laminated on an n-type GaAs substrate and an n-type electrode 18 is provided on the n-type GaAs substrate . Thus, the number of crystal defects in the crystal surface can be reduced to 20 or less per one LED by setting the value of the lattice matching rate &Dgr;a/a of the intermediate layer to be −3.3%, which is lower than −2.5%. As a result, adhesion of the p-type electrode formed on the current diffusion layer is improved and thereby the yield of LED can be enhanced.