The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Jan. 10, 2000
Applicant:
Inventors:
Frank Fischer, Würzburg, DE;
Matthias Keller, Wiesthal, DE;
Thomas Litz, Würzburg, DE;
Gottfried Landwehr, Würzburg, DE;
Hans-Jürgen Lugauer, Gerbrunn, DE;
Andreas Waag, Würzburg, DE;
Markus Keim, Ansbach, DE;
Assignee:
Osram Opto Semiconductors GmbH & Co. oHG, Regensburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/128 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/128 ; H01L 2/13205 ;
Abstract
A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.