The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Sep. 06, 2000
Junko Morikawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A field effect transistor has a preselected build up resistance with respect to an I-V characteristic of the transistor. In this event, a first GaAs layer is formed on a GaAs substrate. Further, an AlGaAs layer is formed on the first GaAs layer and has a predetermined impurity concentration and a preselected Al composition ratio. Moreover, a gate electrode is placed on the AlGaAs layer to form a schottky contact with the AlGaAs layer. In addition, a second GaAs layers are arranged on both sides of the gate electrode via a recess and are formed on said AlGaAs layer. Finally, source and drain electrodes are formed on the second GaAs layers. With such a structure, the Al composition ratio is determined within a preselected range defined by a relationship between the impurity concentration and the build up resistance.