The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Sep. 18, 2000
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Implemented is a method of manufacturing a contact structure having a combination of formation of a buried wiring and that of a low dielectric constant interlayer insulating film in which a connecting hole to be formed in a low dielectric constant interlayer insulating film does not turn into an abnormal shape. A fourth interlayer insulating film is formed on an upper surface of a third interlayer insulating film . Next, patterning for a wiring trench and a connecting hole is carried out into the fourth interlayer insulating film and the third interlayer insulating film , respectively. Then, a pattern of the connecting hole is first formed in a third low dielectric constant interlayer insulating film . Thereafter, a second interlayer insulating film exposed in the pattern is removed and a pattern of the wiring trench is formed in the third interlayer insulating film . Subsequently, second and third low dielectric constant interlayer insulating films and are etched, and the wiring trench and the connecting hole are formed at the same time. Thus, a photoresist can be formed again without the second and third low dielectric constant interlayer insulating films and exposed, and an abnormal shape is generated in the connecting hole with difficulty.