The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2002
Filed:
Apr. 25, 2001
Applicant:
Inventor:
Tomoe Yamamoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A method of manufacturing a semiconductor memory cell is provided. The semiconductor memory cell can include a memory cell transistor ( ) and a capacitor. The capacitor can be formed in a groove ( ) formed in an interlayer insulation film ( ). The capacitor can have a lower electrode including a selective growth film ( ) which may be selectively deposited on a lower electrode film ( ). Selective growth film ( ) can be a ruthenium film having a thickness of approximately 5˜10 nm and may serve as a buffer which may prevent lower electrode and a capacitor insulation film ( ) from deterioration in integrity which could cause increased leakage currents.