The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Jan. 04, 2001
Ajit Dubhashi, Redondo Beach, CA (US);
Brian Pelly, Palos Verdes Estates, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A circuit for synchronous rectification including two power MOSFET transistor switches in which the bottom switch is a P channel MOSFET, rather than an N channel MOSFET. The circuit of the present invention uses a single channel driver, rather than a dual driver and eliminates the deadtime associated with conventional circuits, thus minimizing reverse recovery losses. In an alternative arrangement, the position of the output filter is switched so that the N channel MOSFET conducts during the freewheeling time and the P channel MOSFET (with a larger RDSON) conducts during the conductor charge cycle.