The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Feb. 09, 2001
Trenor F. Goodell, Peaks Island, ME (US);
Fairchild Semiconductor Corporation, Portland, ME (US);
Abstract
A high-frequency switch circuit having an MOS pass gate or transfer transistor. The switch circuit of the invention includes a first impedance element coupled to the gate of the transfer transistor and, preferably, an alternative second impedance element coupled to the bulk of the transfer transistor. One or both of the impedance elements substantially negates the low-parasitic shunt capacitance associated with the transfer transistor that controls signal attenuation under high frequency operation. The impedance element is coupled in series with that parasitic capacitance to increase substantially the impedance of that pathway, thereby increasing substantially the passable bandwidth. The impedance element may simply be a resistor. The switch circuit is suitable for use in an array of applications, including signal propagation in computing systems, routers, and flat panel screen displays.