The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Apr. 14, 2000
Albert M. Young, Whittier, CA (US);
Samuel S. Osofsky, Torrance, CA (US);
The Aerospace Corporation, El Segundo, CA (US);
Abstract
A pulse measurement method is applied to test devices such as high power FET transistors for measuring DC device parameters as well as for measuring S parameters during AC testing. The method uses an input gate bias tee for applying an accurately shaped pulsed input, a sensing bias tee for sensing terminal voltages, such as drain voltages for an FET, and a drive bias tee for coupling in a feedback signal provided by an active feedback circuit receiving AC coupled input error signal of the DC terminal voltage and for providing a drive signal as an error signal so as to maintain the applied DC test voltages at stable levels for improved accuracy.