The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Jan. 03, 2001
Hiroyuki Nakanishi, Kitakasuragi-gun, JP;
Katsunobu Mori, Nara, JP;
Toshiya Ishio, Nabari, JP;
Shinji Suminoe, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor integrated circuit device in accordance with the present invention is provided with first electrode pads, a first insulation layer and a second insulation layer. The first electrode pad are formed on the circuit formation face side of an IC chip. The first insulation layer is placed on areas other than the upper portions of the first electrode pads. The second insulation layer, which is made from a photosensitive material, is formed on the first insulation layer with an opening section for allowing at least one portion of the first electrode, the wire and at least one portion of the second electrode to be exposed. Here, the wire and the second electrode are formed by filling the opening section of the second insulation layer with particles of a conductive material. Thus, it is possible to provide a semiconductor integrated circuit device to which a fine wire processing technique is applied while maintaining the same functions as conventional devices at low costs, and a manufacturing method for such a device.