The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Apr. 20, 2000
Masato Fujinaga, Tokyo, JP;
Tatsuya Kunikiyo, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device capable of controlling an electric potential of an electric conductor to reduce both a leakage caused by a punch-through and a junction leakage in a trench isolating structure having the electric conductor in a trench portion. In a trench isolating structure, an insulating film is disposed on an inner surface of a trench provided in a silicon substrate and doped polysilicon doped with phosphorus in a concentration of approximately 1×10 /cm , for example, is buried as an electric conductor in a lower side of a trench space defined by the insulating film. In addition, a silicon oxide is buried as an insulator in an upper side of the trench space. For the silicon oxide to be used, a TEOS oxide film, a HDP oxide film or a SiOF film having a small dielectric constant may be buried.