The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Mar. 09, 1998
Taiji Ema, Kawasaki, JP;
Tohru Anezaki, Kawasaki, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
The semiconductor storage device comprises memory cell transistors formed on a semiconductor substrate ; first insulation films covering the top surfaces and the side surfaces of gate electrodes of the memory cell transistors; through-holes opened on first diffused layers ; a second insulation film with through-holes opened on first diffused layers and through-holes opened on second diffused layers formed in; capacitors formed on the inside walls and the bottoms of the though-holes and including capacitor storage electrodes , connected to the first diffused layers ; capacitor dielectric films covering the capacitor storage electrodes , and capacitor-opposed electrodes covering at least a part of the capacitor dielectric films ; and, contact conducting films formed on the inside walls and bottoms of the through-holes , and connected to the second diffused layers. This structure of the semiconductor storage device makes it unnecessary to secure an alignment allowance for alignment of the through-holes opened on the first diffused layer and the though-holes opened on the second diffused layer with the gate electrode , which permits the semiconductor storage device to have a small memory cell area.