The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Dec. 07, 1999
Takehiro Hirai, Shiga, JP;
Hiroyuki Kamada, Kyoto, JP;
Hiroyuki Kawahara, Toyama, JP;
Ichiro Nakao, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor device according to the present invention includes: a semiconductor substrate including an active region and an isolation region; an MIS transistor formed in the active region; a trench isolation structure formed in the isolation region; an insulating film covering both the MIS transistor and the trench isolation structure; and an interlevel dielectric film formed on the insulating film. An opening, which reaches part of source/drain doped regions of the MIS transistor and part of the trench isolation structure, is formed in the interlevel dielectric film. An electrode is formed to be in contact with the source/drain doped regions through the opening. The insulating film is made of a material making the insulating film function as etch stop layer for the interlevel dielectric film. A stepped portion is formed between the respective upper surfaces of the active region and the trench isolation structure. At least one of the source/drain doped regions reaches a side of the stepped portion. And an insulating sidewall spacer, which has been formed out of the insulating film, is inserted between the side of the stepped portion and the electrode.