The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Feb. 03, 1999
Ting-Hui Huang, Hsinchu, TW;
Jr-Hong Chen, Hsinchu, TW;
Industrial Technology Research Institute, Hsin Chu, TW;
Abstract
A method for fabricating a high aperture ratio and low contact resistance, TFT structure and devices formed by such method are disclosed. In the method, a source/drain metal layer is deposited directly on a n+ amorphous silicon layer such that the contact resistance of the transistor structure can be significantly reduced. The final deposition of a transparent electrode layer, such as of an ITO material, improves the aperture ratio for the transistor. Numerous other processing benefits are also provided by the present invention novel method such that a more reliable transistor and a capacitor that has more stable storage capacitance can be formed with the transistor. A back channel etched inverted staggered type TFT that has high aperture ratio and low contact resistance is thus provided by the present invention novel method.