The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Sep. 20, 2000
Applicant:
Inventors:
Jong Hoon Yi, Seoul, KR;
Sang Gul Lee, Seoul, KR;
Assignee:
LG. Philips LCD Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
Fabrication of a polysilicon TFT having a lightly doped drain or offset structure. Fabrication includes forming a semiconductor layer, a gate insulating film, and a gate electrode on a substrate. Then, forming lightly doped impurity regions in the semiconductor layer on both sides of the gate electrode. Next, forming an insulating film having a thickness that gradually becomes thinner away from the gate electrode. Then, forming heavily doped impurity regions in the lightly doped impurity regions in the semiconductor layer on both sides of the gate, resulting in regions with continuously varied impurity concentrations.