The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Jan. 15, 2001
Applicant:
Inventor:
Steven J. Laureanti, Lewisville, TX (US);
Assignee:
Ericsson Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ;
U.S. Cl.
CPC ...
H01L 2/166 ;
Abstract
Method for characterization of Laterally Diffused Metal Oxide Semiconductors (LDMOS) at the die reference plane. An LDMOS device is epoxied to a midsection for connection to a test fixture for characterization. The combined physical parameters of the LDMOS device and test fixture are determined. Next, the measurements obtained are adjusted for the physical parameters of the test fixture alone, isolating the physical parameters characterizing the LDMOS device at the die reference plane.