The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2002

Filed:

May. 26, 1999
Applicant:
Inventors:

Yael Nemirovsky, Haifa, IL;

Sara Stolyarova, Haifa, IL;

Benjamin Brosilow, Afula, IL;

Assignee:

Steag C.V.D. Systems Ltd., Migdal Haemek, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 ;
U.S. Cl.
CPC ...
B44C 1/22 ;
Abstract

A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.


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