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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6395192 B1

PDFFull Text
Date of Patent:
May. 28, 2002

Filed:

May. 26, 1999

Method and apparatus for removing native oxide layers from silicon wafers

Applicant:
Inventors:

Yael Nemirovsky, Haifa, IL;

Sara Stolyarova, Haifa, IL;

Benjamin Brosilow, Afula, IL;

Assignee:

Steag C.V.D. Systems Ltd., Migdal Haemek, IL;

Attorney:

Connolly Bove Lodge & Hutz LLP

Primary Examiner:

Frankie L Stinson

Assistant Examiner:

Allan Olsen

Int. Cl.
CPC ...
B44C 1/22 ;
U.S. Cl.
CPC ...
B44C 1/22 ;
Abstract

A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.

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Nemirovsky, Yael. (2002). Method and apparatus for removing native oxide layers from silicon wafers (U.S. Patent No. 6395192). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6395192

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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