The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2002
Filed:
Aug. 28, 2000
Applicant:
Inventor:
Michael Jolley, Kalispell, MT (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/04 ; B08B 3/08 ; C11D 1/83 ; C11D 3/04 ;
U.S. Cl.
CPC ...
B08B 3/04 ; B08B 3/08 ; C11D 1/83 ; C11D 3/04 ;
Abstract
A mixture for cleaning slurries left on the surface of a semiconductor wafer, after a polishing step, includes a caustic, an anionic surfactant, a non-ionic surfactant, and water. The caustic provides an etch rate on the surface to be cleaned in the range of 1-100 Angstroms per minute. The ionic concentration of the caustic ranges from 0.5N to 0.000001N. The caustic etches the surface. The anionic surfactant prevents particle redeposition. The non-ionic surfactant inhibits pitting of the backside of the wafers, if they have exposed silicon or polysilicon.