The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2002

Filed:

Jul. 09, 2001
Applicant:
Inventors:

Yong Tae Kim, Seoul, KR;

Chun Keun Kim, Seoul, KR;

Seong Il Kim, Seoul, KR;

Sun Il Shim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/100 ;
U.S. Cl.
CPC ...
G11C 1/100 ;
Abstract

The driving circuit for an NDRO-FRAM includes several NDRO-FRAM (Non Destructive Non Volatile Ferroelectric Random Access Memory) cells each having a drain, a bulk, a source and a gate and arranged as a matrix. A plurality of reading word lines are separately connected to each drain of the NDRO-FRAM cells arranged in columns, and a plurality of writing word lines are separately connected to each bulk of the NDRO-FRM cells arranged in columns. Several data level transmission circuits for transmitting a data level of the NDRO-FRAM cells are also included, which are connected to a plurality of data level transmission circuits. Accordingly, the present invention is capable of reading and writing of data on the NDRO-FRAM cells.


Find Patent Forward Citations

Kim, Yong. (2002). Driving circuit for non destructive non volatile ferroelectric random access memory (U.S. Patent No. 6392921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6392921

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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