The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Nov. 29, 1999
Kenichi Matsuda, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A light absorbing layer composed of intentionally undoped n-type InGaAs and a window layer composed of intentionally undoped n-type InP are formed sequentially on a first principal surface of a semiconductor substrate composed of n-type InP. A cathode is provided on a p-type diffused region forming an island pattern in the window layer, while an anode is provided on a second principal surface of the semiconductor substrate. A side edge portion of the second principal surface of the semiconductor substrate is formed with a gradient portion having an exposed surface with a (112) plane orientation and forming an angle of 35.3° with respect to the second principal surface. The gradient portion is formed to have a mirrored surface by using an etching solution containing hydrochloric acid and nitric acid at a volume ratio of approximately 5:1 to 3:1.