The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jan. 11, 2001
Applicant:
Inventors:
Kazuaki Kondo, Kawasaki, JP;
Jeffrey Scott Cross, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ; H01L 2/994 ; H01L 3/1119 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/7108 ; H01L 2/994 ; H01L 3/1119 ; H01L 2/976 ;
Abstract
The semiconductor device comprises a first electrode , a ferroelectric film formed on the first electrode, and a second electrode formed on the ferroelectric film. The first electrode or the second electrode comprises SrRuO films with Pb and/or Bi added. Pb and Bi are added to the SRO film, whereby the diffusion of the Pb and Bi contained in the ferroelectric film into the SRO film are suppressed, which leads to an improvement of capacitor ferroelectric properties. Thus, the semiconductor device can realize low-voltage operation and hydrogen deterioration resistance by using the SRO film.