The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Sep. 04, 1997
Applicant:
Inventors:
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method of manufacturing a semiconductor device, comprises the following steps of growing a dielectric film made of a dielectric material whose dielectric constant is improved by crystallization thereof, on a semiconductor substrate to utilize the dielectric film as a capacitor film, and applying a voltage to the semiconductor substrate in a plasma atmosphere to increase a grown interface temperature by “dielectric heating” upon growth of the dielectric film
Quick Actions:
Takehiro, Shinobu. (2002). Method of manufacturing semiconductor device by sputtering dielectric forming materials while selectively heating growing layer (U.S. Patent No. 6391797). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6391797
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile