The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Aug. 09, 2000
Applicant:
Inventors:
Ken Tokashiki, Tokyo, JP;
Eiichi Soda, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method for forming interconnects of a semiconductor device in which an amount of the fluorocarbon-based gas in an etching gas is adjusted to form a side-wall film which has a film thickness not less than a critical film thickness. In the present invention, the damage of a gate electrode and a gate dielectric film, due to charging imbalance caused by an electron shading effect during the etching of an interconnect layer, can be prevented.