The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Aug. 17, 2000
Susan H. Chen, Santa Clara, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Methods are provided that selectively provide various contact resistances based on each individual transistor's influence on an overall chip speed during the formation of active regions and silicide layers. In order to provide lower contact resistance to devices which have a critical influence on overall device speed, the active regions of such critical devices are formed with a lower impurity concentration and thicker silicide layers are provided on the active regions. Likewise, for the normal devices which have less or no influence on overall chip speed, thinner silicide layers are provided on the active regions having a higher impurity concentration than the critical devices.