The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jun. 15, 2001
Applicant:
Inventors:
Jung-Woo Park, Seoul, KR;
Jong-Ryul Yoo, Kyunggi-do, KR;
Jung-Min Ha, Seoul, KR;
Si-Young Choi, Kyunggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/126 ; H01L 2/136 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/126 ; H01L 2/136 ;
Abstract
A method of selective epitaxial growth performed by sequentially and repeatedly introducing a source gas, an etching gas, and a reducing gas in the reaction chamber, wherein controlled epitaxial layer doping may be obtained by introducing a dopant source gas during introducing any one of the source gas, an etching gas, and a reducing gas, and thereby producing a smooth and uniform epitaxial layer on a predetermined region of a semiconductor substrate.