The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Feb. 07, 2000
Applicant:
Inventors:
Hiroshi Okumura, Tokyo, JP;
Kenji Sera, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
In a method for forming a polycrystalline silicon (poly-Si) thin film on an inexpensive glass substrate, a cap film doped with a catalyst element is provided on an amorphous silicon (a-Si) film formed on the substrate. The a-Si film is transformed into the poly-Si film by irradiating an excimer laser beam on the a-Si film through the cap film. Thereafter, the cap film is removed from the poly-Si film together with the catalyst element precipitated therein.