The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Nov. 28, 2000
Dae Gyu Park, Ichon-shi, KR;
Hyundai Electronics Industries Co., Ltd., Ichon, KR;
Abstract
There is disclosed a method of manufacturing a semiconductor device utilizing a gate dielectric film. The present invention can obtain a (Al O ) —(TiO ) gate dielectric film where its the dielectric constant is higher than that of Al O and its leakage current characteristic is improved compared to TiO , by depositing a Ti Al N film on a semiconductor substrate and then forming the (Al O ) —(TiO ) gate dielectric film by oxidization process. Therefore, the present invention can implement a high-speed high-density logic device and an ultra high integration device of more than 1G DRAM class, which utilize a high dielectric material as the gate dielectric film.