The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jun. 19, 1997
Mark C. Hakey, Milton, VT (US);
Steven J. Holmes, Milton, VT (US);
David V. Horak, Essex Junction, VT (US);
William H. Ma, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A high capacitance storage node structure is created in a substrate by patterning a hybrid resist ( ) to produce both negative tone ( ) and positive tone ( ) areas in the exposed region ( ). After removal of the positive tone areas ( ), the substrate ( ) is etched using the unexposed hybrid resist ( ) and negative tone area ( ) as a mask. This produces a trench ( ) in the substrate ( ) with a centrally located, upwardly projecting protrusion ( ). The capacitor ( ) is then created by coating the sidewalls of the trench ( ) and protrusion ( ) with dielectric ( ) and filling the trench with conductive material ( ) such as polysilicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile