The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jul. 25, 2001
Kurt Hoffmann, Taufkirchen, DE;
Oskar Kowarik, Neubiberg, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for nondestructively reading memory cells of an MRAM memory, which includes steps of: determining a standard resistance of a memory cell at a voltage at which a resistance of the memory cell is independent of a stored content of the memory cell; determining an actual resistance of the memory cell at a voltage at which the resistance of the memory cell is dependent on the stored content of the memory cell; obtaining a normalized actual resistance of the memory cell by dividing the actual resistance by the standard resistance; obtaining a comparison result by comparing the normalized actual resistance with a reference value; and detecting the stored content of the memory cell dependent on the comparison result.