The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
May. 27, 1998
Masumi Taninaka, Tokyo, JP;
Mitsuhiko Ogihara, Tokyo, JP;
Hiroshi Hamano, Tokyo, JP;
Takatoku Shimizu, Tokyo, JP;
Oki Electric Industry Co., LTD, Tokyo, JP;
Abstract
According to the present invention, a plurality of p-type semiconductor layers are formed in a single row and a first layer insulating film having first opening portions and an n-side opening portion is formed on the layers in an n-type semiconductor block . On the first layer insulating film , p-side electrodes to connect to the p-type semiconductor layers at the first opening portions and an n-side electrode (an n-side contact electrode and an n-side pad electrode ) to connect with the n-type semiconductor block at the n-side opening portion are formed. Furthermore, p-side common wirings to connect with specific p-side electrodes are formed via a second layer insulating film . The p-side electrodes and the n-side electrode are formed using the same conductive film material through a single film formation and patterning process. An Au alloy film, for instance, may be used to form the conductive film that is to constitute the p-side electrodes and the n-side electrode