The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Aug. 27, 1997
Applicant:
Inventors:
Hiroyuki Seto, Shiga-ken, JP;
Shogo Yoshida, Shiga-ken, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/358 ;
Abstract
The invention provides a semiconductor device with a passivation film provided on a surface thereof, said passivation film comprising a SiON layer in contact with the surface of said semiconductor device, and a Si N layer provided at the outer side of said SiON layer, chraracterized in that said passivation film has an outermost layer of Si N and said outermost layer has a portion in contact with said semiconductor device or the exposed area of said SiON layer is nitrided. The semiconductor device has a high bonding strength between the passivation film and the semiconductor device and high moisture resistance.