The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Sep. 18, 2000
Applicant:
Inventors:
Tomohiro Yamashita, Hyogo, JP;
Yoshinori Okumura, Hyogo, JP;
Atsushi Hachisuka, Hyogo, JP;
Shinya Soeda, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
The semiconductor device has a triple well structure. The triple well and other wells have impurity concentration distributions in the depth direction, which are determined in accordance with required function. Thereby, the required performances such as suppression of a leak current can be achieved even in a miniaturized structure.