The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Mar. 25, 1999
Applicant:
Inventor:
Richard Owen, Regensburg, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1108 ; H01L 2/994 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/1108 ; H01L 2/994 ; H01L 3/1119 ;
Abstract
The memory configuration has memory cells each with a selection transistor and a trench capacitor. The storage electrode is formed by a substrate region along the trench wall. A cell plate that forms a common opposing electrode for a number of memory cells lies inside the trench. The cell plate is structured in strips on the surface of the substrate. The strips can run parallel to the direction of cell rows or enclose a defined angle (other than zero) with this direction. The arrangement in the form of strips halves the minimum structure width in the region of the cell plate.