The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jul. 27, 2000
Applicant:
Inventor:
Bruce Odekirk, Hillsboro, OR (US);
Assignee:
Caldus Semiconductor, Inc., Keizer, OR (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/940 ; H01L 3/10312 ; H01L 2/715 ; H01L 2/144 ; H01L 2/128 ;
U.S. Cl.
CPC ...
H01L 2/940 ; H01L 3/10312 ; H01L 2/715 ; H01L 2/144 ; H01L 2/128 ;
Abstract
Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy through a dielectric layer.